Encapsulation and Yield Improvement of a High Resolution Polymorphous 3ATIAMOLED Display

摘要

Using our polymorphous silicon top gate process we produced fully addressed 200 dpi 3ATI AMOLED displays with integrated row drivers. We achieved high output and yield due to side by side processing in an industrial type KAI1 PECVD reactor and elimination of mechanical and thermal stress based encapsulation problems.