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Thick Film Resistors as Cryogenic Thermometers

机译:薄膜电阻作为低温温度计

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摘要

This work aimed at assessing relationships between composition and performance of thick film resistors (TFRs) for cryogenic thermonmeters. The temperature dependence of resistance in RuO_2-based TFRs was studied in the range 1.2K to 300K. The resistance fits the exponential relationship R = R_oexp (T_o/T)~x with x = 1/4 at higher temperatures with a transition to the x = 1/2 regime on the same sample at lower temperatures (<20 K). The transition temperature T_c between these regimes has a well defined dependence on the sample sheet resistance R_s. Both the R_o values scale down as the RuO_2 fraction and show similar dependencies on the Mn content. The magnetoresistive responses were measured in the same temperature range in magnetic field H up to 20 Testa. The measured relative change of resistance DELTA R/R never exceeds 10~(-2) for H values up to 8 Tesla. In summary the developed resistors exhibit superior performances in comparison with the presently used thermometers. In addition, they show predictable properties at changing temperature and magnetic field strength, making easier their calibration.
机译:这项工作旨在评估低温温度计的厚膜电阻器(TFR)的成分与性能之间的关系。在基于RuO_2的TFR中研究了电阻的温度依赖性,范围为1.2K至300K。电阻在较高温度下拟合指数关系R = R_oexp(T_o / T)〜x,其中x = 1/4,而在较低温度下(<20 K),在同一样品上过渡到x = 1/2范围。这些状态之间的转变温度T_c对样品薄层电阻R_s具有明确定义的依赖性。两个R_o值都按RuO_2比例缩小,并且显示出对Mn含量的相似依赖性。在磁场温度高达20 Testa的相同温度范围内测量了磁阻响应。对于高达8 Tesla的H值,测得的电阻DELTA R / R相对变化不会超过10〜(-2)。总之,与目前使用的温度计相比,开发的电阻器具有优越的性能。此外,它们在变化的温度和磁场强度下显示出可预测的特性,从而使其校准更加容易。

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