Ga doped hematite (α-Fe2O3): A promising magnetic sensor material

摘要

The magneto-electronic properties have been demonstrated for a novel class of ferromagnetic semiconductors based on Ga doped a-FeO (hematite) system. The doping of the Ga atoms into the lattices of Fe sites of oc-FeO structure has been performed by chemical coprecipitation and mechanical alloying routes. Among the metal doped hematite systems, Ga doped oc-FeO system has been found as a good candidate for achieving simultaneous electric and magnetic field controlled magneto-electronic properties. The magnetic field dependent I-V characteristics and ferroelectric polarization, and ferromagnetic loop under electric field have suggested that Ga doped a-FeO system could be a potential candidate for the room temperature applications in spintronics devices, especially in magnetic sensors and switches as shown in this paper.