Electronic structure of GaN (0001)-(1x1) surface –an angle resolved photoemission study

摘要

The angle-resolved photoemission studies have been performedrnon thern(( )) 1 0001 000 (N-polar) surface of bulk gallium nitride crystals. The bandrnstructure was investigated along the Γ-A and Γ-K-M directions on thernsurface with (1x1) symmetry. The photoemission spectra were measuredrnunder normal and off-normal emission regime for the surface prepared byrnArrnAr++ ion sputtering and annealing as well as for the same surface subjected tornGa deposition under MBE conditions. The bulk and surface related spectralrnfeatures were identified by analysis of the acquired experimental data and byrncomparison with the results of available band structure calculations.