首页> 外文会议>26th European Solid-State Circuits Conference, Sep 19-21, 2000, Stockholm, Sweden >NEW REGULATED VOLTAGE DOWN CONVERTER BASED ON MODIFIED BAND-GAP CELLS
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NEW REGULATED VOLTAGE DOWN CONVERTER BASED ON MODIFIED BAND-GAP CELLS

机译:基于改进的带隙电池的新型稳压降压转换器

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A new simple on-chip regulated voltage-down-converter (VDC) is presented. The VDC output can be advantageously fixed at 2.5V, 3V or 3.5V. The voltage down converter was fabricated in 0.5μm CMOS technology from STMicroelectronics. The circuit provides a typical 3V output with a temperature dependency of only 300μV/℃. At 10mA loading current, the output is always stabilised within +-10% with 4V~10V supply voltage variations and -40℃~125℃ temperature variations. Including the output power stage the circuit uses only 22 transistors.
机译:提出了一种新的简单的片上稳压降压转换器(VDC)。 VDC输出可以有利地固定在2.5V,3V或3.5V。降压转换器采用意法半导体(STMicroelectronics)的0.5μmCMOS技术制造。该电路提供典型的3V输出,其温度依赖性仅为300μV/℃。负载电流为10mA时,在4V〜10V的电源电压变化和-40℃〜125℃的温度变化下,输出始终稳定在+ -10%以内。包括输出功率级在内,该电路仅使用22个晶体管。

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