Effect of chemical polish etching on performance of nanocrystalline cubic silicon carbide / crystalline silicon heterojunction solar cells

摘要

In order to improve the short circuit current density on nanocrystalline cubic silicon carbide (nc-3C-SiC:H)/c-Si heterojunction solar cells,application of textured wafer is necessary.Here,we use textured p-type wafer to fabricate nc-3C-SiC:H)/c-Si heterojunction solar cells.The effect of acid-based chemical polish etch on textured wafer is investigated.We found that the CP etching after texturing improved open circuit voltage (Voc) and fill factor (FF) without reducing Jsc.So far,an aperture area efficiency of 17.4％ has been obtained.Compared with the cell without the CP etching,the conversion efficiency was improved by about 22％.It is found that with a CP etch and with correct deposition parameters,high device performance can be achieved.