Temperature dependences of line widths and peak positions of optical absorption peaks due to localized vibration of hydrogen Si

摘要

We studied the temperature dependences of line widths and peak positions of optical absorptions due to the hydrogen bound to point defects and acceptors in Si. Specimens were prepared from floating-zone-grown Si crystals of high-purity and of p-type, doped with group III acceptors. They were doped with H by heating at 1300℃ in H_2 gas followed by quenching. The former specimen was then irradiated with 3 MeV electrons at RT to form complexes of H and point defects and the latter specimens were annealed at 150℃ to form H―acceptor pairs. We measured their optical absorption spectra by an FT-IR spectrometer in the temperature range of 6K and RT. Peaks due to localized vibrational modes of H bound to acceptors and point defects were well fitted with Lorentzian line shapes. The temperature dependences of those line widths and peak positions were analyzed with the dephasing model proposed by Persson and Ryberg.