Few-Layer Mote2 Suspended Channel Transistors and Nanoelectromechanical Resonators

摘要

Molybdenum ditelluride (MoTe2) is a rapidly emerging two-dimensional (2D) transition metal dichalcogenide (TMDC) layered material thanks to the features of low energy barrier for phase transition and the sizeable bandgap close to that of silicon (Si). These attractive features make it a focus of substantial research interest in future nanoelectronics. Here, we report on the first demonstration of few-layer MoTe2 suspended channel transistors (SCTs) and nanoelectromechanical resonators operating in the high frequency (HF) regime. MoTe2 SCTs exhibit On/Off ratio levels at IOn/IOff ≈ 10⁴. We also present the passivation of MoTe2 resonators by using hexagonal boron nitride (h-BN) crystal, which essentially creates h-BN/MoTe2 heterostructure bimorphs. Moreover, we investigate the electrical tuning of the resonator and observe resonance frequency tuning of Δf/f ≈ 13% by varying gate voltage (VG) from 0 to −16V.