New Aspects of Crystallization in Amorphous Ta_2O_5 Films

摘要

Crystallization of the amorphous Ta_2O_5 is harmful for capacitor quality, it affects capacitor performance and reliability. Disruption of the dielectric by grown crystals is the major reason for capacitor catastrophic failure. However, the crystallization process may be suppressed significantly or even eliminated for the capacitor lifetime if crystalline nuclear are removed from the Ta surface. From the above results, this may be accomplished by adjustment of the capacitor processing conditions. Particularly by the use of a short annealing in vacuum of formed Ta anodes. In this case an improvement of DF was shown. This result can also come from aborting of the crystallization process in the amorphous Ta_2O_5 film.