Enhanced Emission and Modulation Properties of Localized Surface Plasma Coupled GaN-based Green Light-Emitting Diodes

机译：局域表面等离子体耦合的基于GaN的绿色发光二极管的增强的发射和调制特性

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A localized surface plasma coupled LED with modulation bandwidth of 152MHz which was enhanced by 1.65 times relative to grid LED was fabricated for high-speed VLC system, while the light power increased by 1.67 times.

机译：制造用于高速VLC系统的局部表面等离子体耦合LED，其调制带宽为152MHz，相对于网格LED提高了1.65倍，而光功率提高了1.67倍。

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来源
《2018 Optical Fiber Communications Conference and Exposition》|2018年|1-3|共3页
会议地点 San Diego(US)
作者
Jiehui Li; Pengqi Gou; Nan Chi; Haiyan Ou;
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作者单位

Shanghai Institute for Advanced Communication and Data Science, Key Laboratory of Information Science of Electromagnetic Waves (MoE), Fudan University, Shanghai 200433, China;

Shanghai Institute for Advanced Communication and Data Science, Key Laboratory of Information Science of Electromagnetic Waves (MoE), Fudan University, Shanghai 200433, China;

Shanghai Institute for Advanced Communication and Data Science, Key Laboratory of Information Science of Electromagnetic Waves (MoE), Fudan University, Shanghai 200433, China;

Technical University of Denmark, Department of Photonics Engineering, 2800 Kgs. Lyngby, Denmark;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Light emitting diodes; Bandwidth; Radiative recombination; Optical modulation; Optical device fabrication; Couplings;

机译：发光二极管带宽辐射复合光调制光器件制造耦合;

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专利

1. Enhanced surface and optical properties of colloidal silver nano-particles on GaN-based light-emitting diodes by a localized surface plasmon resonance effect using a low-cost metal-assisted chemical etching method [J] . Kim Bo-Myung, Reddy M. Siva Pratap, Lee Young-Woong, Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter . 2019,第期

机译：利用低成本金属辅助化学蚀刻方法，通过局部等离子体共振效应增强胶体银纳米颗粒对GaN的发光二极管的表面和光学性质
2. Indium Localization-Induced Red, Green, and Blue Emissions of Semipolar (11-22) GaN-Based Light-Emitting Diodes [J] . Jun-Ho Choi, Seung-Hye Baek, Hee-Wung Kim, Physica status solidi (a) Applications and materials science . 2020,第19期

机译：铟本地化诱导的半极（11-22）GaN的发光二极管红色，绿色和蓝色排放
3. Localized surface plasmon-induced emission enhancement of a green light-emitting diode [J] . Yeh DM, Huang CF, Chen CY, Nanotechnology . 2008,第34期

机译：局部表面等离子体激元诱导的绿色发光二极管的发射增强
4. Enhanced Emission and Modulation Properties of Localized Surface Plasma Coupled GaN-based Green Light-Emitting Diodes [C] . Jiehui Li, Pengqi Gou, Nan Chi, Optical Fiber Communications Conference and Exposition . 2018

机译：增强局部等离子体耦合GaN的绿色发光二极管的发射和调制性能
5. Optically functional structures on GaN-based light-emitting diodes for light-extraction efficiency enhancement and emission pattern control. [D] . Ma, Ming. 2013

机译：GaN基发光二极管上的光学功能结构，用于提高光提取效率和控制发射模式。
6. Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons [O] . Yung-Chi Yao, Jung-Min Hwang, Zu-Po Yang, -1

机译：通过局部表面等离子体激元提高GaN基垂直型发光二极管的外部量子效率
7. Enhanced external quantum efficiency in GaN-based vertical-type light-emitting diodes by localized surface plasmons [O] . Yung-Chi Yao, Jung-Min Hwang, Zu-Po Yang, 2016

机译：通过局部表面等离子体增强了GaN基垂直发光二极管的外部量子效率

Enhanced Emission and Modulation Properties of Localized Surface Plasma Coupled GaN-based Green Light-Emitting Diodes

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