Optimization of active region thickness of CdTe/CdS Thin Film Superstrate Solar Cell to achieve ~25 efficiency: A simulation approach

摘要

Simulation results of a novel and simplified heterostructure of CdTe and CdS as a thin-film solar cell have been presented in this article. All the simulations have been done using Analysis of Microelectronic and Photonic Structures - 1 Dimensional (AMPS-1D) simulator. The thickness of the absorber and window layers was varied from 500nm to 3μm and 30nm to 100nm respectively to realize its effect on cell performance. The highest light conversion efficiency, η of ~25% with short circuit current density, Jn_scnof 25.88mA/cmn²n, open circuit voltage, Vn_ocnof 1.077V and fill factor, FF of 0.888 (88.8%) were obtained with 1μm (1000nm) p-type CdTe absorber layer and 0.04μm (40nm) n-type CdS window layer. Lastly cell performance was investigated by varying cell temperature from 280°K (7°C) to 333°K (60°C).