(IEMN) CNRS UMR8520, Institute of Electronics, Microelectronics and Nanotechnology, Villeneuve d' Ascq, cedex, France;
(IEMN) CNRS UMR8520, Institute of Electronics, Microelectronics and Nanotechnology, Villeneuve d' Ascq, cedex, France;
(IEMN) CNRS UMR8520, Institute of Electronics, Microelectronics and Nanotechnology, Villeneuve d' Ascq, cedex, France;
(IEMN) CNRS UMR8520, Institute of Electronics, Microelectronics and Nanotechnology, Villeneuve d' Ascq, cedex, France;
(IEMN) CNRS UMR8520, Institute of Electronics, Microelectronics and Nanotechnology, Villeneuve d' Ascq, cedex, France;
(IEMN) CNRS UMR8520, Institute of Electronics, Microelectronics and Nanotechnology, Villeneuve d' Ascq, cedex, France;
Logic gates; Fatigue; Graphene; Radio frequency; Transistors; Performance evaluation; Substrates;
机译:朝柔性全碳电子产品:柔性有机场效应晶体管和使用溶液加工的全石墨烯源/漏电片/栅电极的逆变电路
机译:用溶液处理的石墨烯源-漏和栅电极制备透明且柔性的有机场效应晶体管
机译:利用石墨烯源/漏电极改善了底栅极,底部接触单壁碳纳米管晶体管的电气性能和透明度
机译:底栅电极柔性石墨烯场效应晶体管疲劳试验
机译:低能电子束辐照对分离门测试结构上石墨烯和石墨烯场效应晶体管的影响以及石墨烯的拉曼计量。
机译:聚对二甲苯C衬底上的柔性底栅石墨烯晶体管和电流退火的影响
机译:迈向灵活的全碳电子产品:灵活的有机场效应晶体管和逆变器电路使用溶液处理的全石墨烯源/漏极/栅极电极