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An Effect of Device Topology in VeSTIC Process on Logic Circuit Operation A Study Based on Ring Oscillator Operation Analysis

机译:VeSTIC过程中器件拓扑结构对逻辑电路操作的影响-基于环形振荡器操作分析的研究

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摘要

A design and manufacturing of test structures for characterization of logic integrated circuits in a VeSTIC process developed in ITE, have been described. The logic cell static characteristics as well as waveforms of the 53-stage ring oscillator have been presented. The low oscillation frequency of the circuit has been attributed to the parasitic effects induced by the conservative circuit design based on the VeSTIC process adopted in ITE. Based on the layout and on the process specification, the parasitic elements of the inverter equivalent circuit have been extracted. This equivalent circuit has been used for estimation of the inverter propagation times and their dependence on the supply bias. The same approach has been used for characterization of the CMOS inverter in the ideal VeSTIC process. Frequencies of the two versions of the ring oscillator have been calculated.
机译:已经描述了用于在ITE中开发的VeSTIC工艺中表征逻辑集成电路的测试结构的设计和制造。提出了逻辑单元的静态特性以及53级环形振荡器的波形。电路的低振荡频率归因于基于ITE中采用的VeSTIC工艺的保守电路设计所引起的寄生效应。根据布局和工艺规范,提取了逆变器等效电路的寄生元件。该等效电路已用于估算逆变器传播时间及其对电源偏置的依赖性。在理想的VeSTIC工艺中,已使用相同的方法来表征CMOS反相器。已经计算出两个版本的环形振荡器的频率。

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