Multilevel resistance switching phenomena observed in the Cu (Ti)/HfO2/Au device

摘要

Memory devices having multiple resistance states is promising for increase of memory capacity as well as realizing higher functionality. In this study, we studied multiple resistance states appearing in the reset operation mode in the Cu/HfO/Au and Ti/HfO/Au ReRAM devices. Both devices showed bipolar resistance switching property. Ti/HfO/Au device showed multiple resistance states strictly dependent on the amount of reset voltage, on the other hand, resistance of Cu/HfO/Au device did not show clear dependence on the reset voltage.