Modelling of a GaAs based infrared LED with high efficiency and minimal computation time

摘要

With the advent of Electronics across the globe, the use of LEDs in electronic devices, right from the ones in a remote control to the ones used for warehouse li ghting has increased exponentially. The prime consideration while designing the LEDs remains the same, minimal power consumption and maximum emission efficiency. GaAs based Light Emitting Diodes generally operates in the near Infrared Region (IR) emitting infrared light. As infrared light cannot be detected by naked human eyes, GaAs based LEDs find use in Remote Controllers, Medical treatment applications, cameras and so on. The paper deals with modelling GaAs based LED, which has a high emission efficiency and consumes minimal power. Based on suitable p-type doping near the n-wafer, high rate of excitation is obtained in the IR region[2], thus facilitating maximum efficiency of the output light. This can pave way for an application of GaAs based LEDs in various optoelectronic applications in the coming future.