The contribution of the main-junction lateral resistive zone to the ruggedness of high-voltage FRDs: A new insight

机译：主结横向电阻区对高压FRD坚固性的贡献：新见解

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For the first time, this paper reveals and explains the detailed contribution of the main-junction lateral resistive zone to the ruggedness of high-voltage fast recovery diodes during a harsh reverse recovery. And its optimized width is discussed.

机译：本文首次揭示并解释了在反向反向恢复期间主结横向电阻区对高压快速恢复二极管的坚固性的详细贡献。并讨论了其优化宽度。

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来源
《2017 International Conference on Electron Devices and Solid-State Circuits》|2017年|1-2|共2页
会议地点 Hsinchu(CN)
作者
Peng Li; Yu Wu; Jialiang Wen; Lei Cui; Chenjing Liu;
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作者单位

Yong Guo Lab of Power Semiconductor Device Ics, Beijing University of Technology, Beijing, China;

Yong Guo Lab of Power Semiconductor Device Ics, Beijing University of Technology, Beijing, China;

Yong Guo Lab of Power Semiconductor Device Ics, Beijing University of Technology, Beijing, China;

Yong Guo Lab of Power Semiconductor Device Ics, Beijing University of Technology, Beijing, China;

Yong Guo Lab of Power Semiconductor Device Ics, Beijing University of Technology, Beijing, China;

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会议组织
原文格式 PDF
正文语种 eng
中图分类
关键词
Plasma temperature; Semiconductor diodes; Electric fields; Resistance; Data models; Electronic ballasts;

机译：等离子体温度;半导体二极管;电场;电阻;数据模型;电子镇流器;;

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The contribution of the main-junction lateral resistive zone to the ruggedness of high-voltage FRDs: A new insight

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