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Fabrication of infrared thermal emitters with metal meshed filters by the CMOS process

机译:通过CMOS工艺制造带有金属网状滤光片的红外热辐射器

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Infrared (IR) thermal emitters with metal-meshed filter were designed and fabricated using standard 0.18-μm CMOS process. The metal-meshed filters were layout on top of micro heaters, and the substrate under the micro heaters were etched for thermal isolation and enhancing heating efficiency. The chip can be heated up to 530°C, and can generate a power density of 7.81mW/cm2 with a bias of 3V.
机译:具有金属网状滤光片的红外(IR)热辐射器使用标准的0.18-μmCMOS工艺进行设计和制造。将金属丝网过滤器布置在微型加热器的顶部,并对微型加热器下的基板进行蚀刻以实现热隔离并提高加热效率。芯片可以加热到530°C,并可以产生3.81mW / cm 2 的功率密度,偏置电压为3V。

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