Bridge rectifier with Cylindrical Surrounding Double-Gate MOSFET: A model for better efficiency

摘要

Various domestic appliances use the Direct Current (DC) for its operation such as chargers, TV and DVD sets, laptops etc. However, the powers supplied in homes are Alternating Current (AC), 220/230V 50Hz. Several rectifiers have been developed over the time to convert this AC to DC (suitable for devices or appliances) and the better option among them is the diode bridge rectifier. In terms of power consumption, the voltage drops across the diodes becomes significant, especially when a small input voltage is used. The micro-power electricity and energy harvesters are becoming innovative form of power generation, which also uses the rectifiers. The power loss in diode bridge rectifier becomes significant in rectifying this form of energy. Generally, the home appliances are incorporated with the integrated circuits (ICs). In this nanotechnology era (microchips), replacement of diode with MOSFET will improve the parameters of rectifier circuits in terms of switching speed, power consumption, bulky device size, and various heat or thermal losses. In this research work, we have modelled a basic structure of bridge rectifier with the help of a novel structure of Cylindrical Surrounding Double-Gate (CSDG) MOSFET. The improvement for some parameters has been analysed.