Optimization and characterization of silicon nitride for solar photovoltaic system

摘要

In this paper, our objective was to determine the optimum deposition parameters in order to get optimal optical and electrical properties of Silicon nitride (Si₃N₄) film for solar photovoltaic application. The deposition was performed in ICPCVD (Inductively Coupled Plasma Chemical Vapour Deposition) on a S_i- wafer by using solution of de-ionized (DI) water, aqueous NH₄OH (Ammonium hydroxide) and aqueous H₂O₂ (Hydrogen peroxide) for cleaning the substrate. After obtaining the optimum deposition parameters for each films, in order to improve the quality of film, optimization had been done by changing different experimental parameters and annealing at different temperatures, finally the optical and electrical performance of the solar cell has been estimated and compared.