Underlayer-dependent perpendicular magnetic anisotropy of Co2Fe0.4Mn0.6Si Heusler alloy ultra-thin films

机译：Co2Fe0.4Mn0.6Si Heusler合金超薄膜的下层依赖性垂直磁各向异性

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Spin transfer torque magnetoresistive random access memory (STT-MRAM) is being developed as a candidate for the next generation memories nowadays.

机译：自旋转移转矩磁阻随机存取存储器（STT-MRAM）现已发展成为当今下一代存储器的候选产品。

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来源
《2017 IEEE International Magnetics Conference》|2017年|1-1|共1页
会议地点 Dublin(IE)
作者
M. Sun; S. Takahashi; T. Kubota; A. Tsukamoto; Y. Sonobe; K. Takanashi;
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作者单位

Institute for Materials Research, Tohoku University, Sendai, Japan;

Samsung RD Institute Japan, Yokohama, Japan;

Institute for Materials Research, Tohoku University, Sendai, Japan;

Department of Electronic Engineering, College of Science and Technology, Nihon University, Funabashi, Japan;

Samsung RD Institute Japan, Yokohama, Japan;

Institute for Materials Research, Tohoku University, Sendai, Japan;

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原文格式 PDF
正文语种 eng
中图分类
关键词
Perpendicular magnetic anisotropy; Metals; Magnetometers; Annealing; Saturation magnetization; Films;

机译：垂直磁各向异性；金属；磁力计；退火；饱和磁化强度；薄膜;

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专利

1. Underlayer-dependent perpendicular magnetic anisotropy of Co_2Fe_(0.4)Mn_(0.6)Si Heuslar alloy ultra-thin films [J] . Mingling Sun, Shigeki Takahashi, Takahide Kubota, 日本磁気学会学術講演概要集 . 2016,第40期

机译：Co_2Fe_（0.4）Mn_（0.6）Si Heuslar合金超薄膜的下层依赖性垂直磁各向异性
2. Perpendicular Magnetic Anisotropy of Co₂Fe_xMn_1−xSi Heusler Alloy Ultra-Thin Films [J] . Kamada T., Kubota T., Takahashi S., Magnetics, IEEE Transactions on . 2014,第11期

机译：Co _{2 Fe _{x Mn _{1- x Si Heusler合金的垂直磁各向异性超薄膜}}}
3. Polycrystalline Co2Fe0.4Mn0.6Si Heusler alloy thin films with high B2 ordering and small magnetic anisotropy for magnetic tunnel junction based sensors [J] . Nana Kudo, Mikihiko Oogane, Masakiyo Tsunoda, AIP Advances . 2019,第12期

机译：具有高B2排序的多晶CO2FE0.4MN0.6SI HEUSLER合金薄膜，磁隧道结基传感器具有高B2排序和小磁各向异性
4. Underlayer-dependent perpendicular magnetic anisotropy of Co2Fe0.4Mn0.6Si Heusler alloy ultra-thin films [C] . M. Sun, S. Takahashi, T. Kubota, IEEE Magnetics Conference . 2017

机译：Co2Fe0.4mn0.6si Heusler合金超薄膜的底层依赖性垂直磁各向异性
5. Strain engineering of magnetic anisotropy: The epitaxial growth of cobalt -manganese -gallium Heusler alloy films on III-V semiconductors [D] . Carr, David Michael 2004

机译：磁各向异性的应变工程：III-V族半导体上钴-锰-镓赫斯勒合金膜的外延生长
6. Perpendicular Magnetic Anisotropy in Heusler Alloy Films and Their Magnetoresistive Junctions [O] . Atsufumi Hirohata, William Frost, Marjan Samiepour, 2018

机译：Heusler合金膜及其磁阻结的垂直磁各向异性
7. Low-temperature crystallisation of Heusler alloy films with perpendicular magnetic anisotropy [O] . William Frost, Marjan Samiepour, Atsufumi Hirohata 2019

机译：具有垂直磁各向异性的Heusler合金膜的低温结晶

Underlayer-dependent perpendicular magnetic anisotropy of Co2Fe0.4Mn0.6Si Heusler alloy ultra-thin films

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