Calculation of spin polarized transport parameters in “simetric” GMR structures of Co/Cu/Co type

摘要

Using the phenomenological approach (resistor [1, 2] and two-current [3, 4] models) the effect of a giant magnetic resistivity in a magneto-ordered three-layer film Co/Cu/Co is theoretically analyzed. It has been shown for the first time that, based on the results of the experimental study of the magnitude dependence of the magnetically resistive ratio (dependence on the thickness of the covering magnetic layer), it is possible to calculate the volume asymmetry parameter characterizing asymmetric scattering of spin-polarized charge carriers in the volume of magnetic metal layers and the specific resistance of minority electrons assuming that the resistivity of the majoritarian charge carriers coincides with the specific resistance of the nonmagnetic layer.