A broadband Darlington power amplifier using 0.5 µm GaN-on-SiC HEMT process

摘要

A broadband Darlington power amplifier was implemented in 0.5 μm GaN-on-SiC HEMT MMIC process. The design with cascode topology utilized to improve the characteristic of small signal gain and maximum output power. The proposed power amplifier exhibit a measured maximum gain of 15 dB under the 3-dB bandwidth form 1.0 GHz to 5.8 GHz with static dc power consumption of 330 mW from a 30 V dc supply. The saturation output power and maximum power added efficiency can be operated to 30.2 dBm and 21 %, respectively. The size of chip is 3.78 mm2.