Interrogation properties of ternary content addressable memory using a CMOS-SRAM cell

摘要

This paper describes new ternary content addressable memory (TCAM) in which a CMOS-SRAM cell is used as a storage element. The TCAM can store three states of “1”, “0” and “Don't Care”. Don't Care acts as wildcards during interrogation operations. Also, the interrogation properties of the proposed TCAM are analyzed in detail. The theoretical results are good coincidence with HSPICE simulation.