Department of Physical Electronics and Technology, Saint Petersburg Electrotechnical University “LETI”, Russia;
Department of Physical Electronics and Technology, Saint Petersburg Electrotechnical University “LETI”, Russia;
Department of Physical Electronics and Technology, Saint Petersburg Electrotechnical University “LETI”, Russia;
Department of Physical Electronics and Technology, Saint Petersburg Electrotechnical University “LETI”, Russia;
Department of Physical Electronics and Technology, Saint Petersburg Electrotechnical University “LETI”, Russia;
Ioffe Institute, St. Petersburg, Russia;
Films; Solids; Substrates; Capacitors; Microwave theory and techniques; Temperature measurement;
机译:MgTi1?x(Zn1 / 3B2 / 3)xO3(B = Nb5 +,Ta5 +)陶瓷在微波频率下的介电性能
机译:ε-RhxFe2?xO3薄膜的铁电和亚铁磁性
机译:具有前景的微波介电特性的Ba0.5Sr0.5TiO3-Bi1.5Zn1.0Nb1.5O7复合薄膜在微波器件中的应用
机译:Bazrxti1的结构和介电性能和Basnxti1的微波应用的薄膜xO3和Basnxti1?XO3薄膜
机译:应变和缺陷对可调谐微波应用中钛酸钡锶锶薄膜介电性能的影响。
机译:超薄Hf-Ti-O高k栅介电薄膜的电学特性及其在ETSOI MOSFET中的应用
机译:通过脉冲激光沉积在(0 0 1)SrTiO3上生长的BaZrxTi1-xO3外延薄膜中B位阳离子的异质分布