Effect of higher carrier injection rate on charge transport and recombination in mixed-host organic light emitting diode

摘要

The effect of anode surface modification on performance of uniformly mixed-host (MH) emissive layer (EML) based organic light emitting diode (OLED) has been investigated by the numerical simulation. Indium Tin Oxide (ITO) used as anode in the device. Due to proposed surface modification technique of ITO, the energy barrier at anode/organic layer interface is reduced which consummately enhanced the hole injection rate that leads to balance of carriers transportation and recombination in the EML. Through the numerical simulation, the electrical characteristics and internal device physics of uniform MH-OLED have been analyzed quantitatively. Calculated current balance factor which is related to the external quantum efficiency also confirmed the efficiency enhancement of MH-OLED by the proposed ITO work function modification technique.