Implication of copper indium gallium selenide on device for efficient thin film solar cell technology

摘要

This paper presents an earnest attempt on the development of solar cells mainly, high efficient solar cells which are very much needed for the development of photovoltaic industries in India. CuInGaSe2 thin film solar cells have a potential for highest efficiencies on the laboratory scale as well as on the level of large area modules. The role of intrinsic defects in CuInGaSe2 and their implication on device performance also studied in this paper. Microstructural characterization of the cross-sectional device, as well as the depth analysis of the defect distribution, carried out to analyze the factors influencing the properties of CuInGaSe2. Efforts will be made to design the material properties of CuInGaSe2 for tailoring the device performance. The developed bilayer and hybrid bulk junction solar cell structures evaluated and the performance of the developed structures optimized from the feedback of the characterization results.