首页> 外文会议>2016 International Conference of Asian Union of Magnetics Societies >Improvement of Stress Induced Reliability Shift in AMR Sensor
【24h】

Improvement of Stress Induced Reliability Shift in AMR Sensor

机译:改善AMR传感器中应力引起的可靠性偏移

获取原文
获取原文并翻译 | 示例

摘要

When the Moore's Law goes to the limit, “Industry 4.0” intelligent industry will rise. The development of sensors is the most important application of IOT. Single-chip three-axis Anisotropic Magneto-Resistive (AMR) sensor technology requires the integration of the ASIC (Application-Specific Integrated Circuit) with sensor itself. To have stable yields for production, its biggest challenge will be the reliability verification.
机译:当摩尔定律达到极限时,“工业4.0”智能产业将兴起。传感器的发展是物联网的最重要应用。单芯片三轴各向异性磁阻(AMR)传感器技术要求将ASIC(专用集成电路)与传感器本身集成在一起。为了获得稳定的产量,其最大的挑战将是可靠性验证。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号