Guided mode resonant photodiode for highly sensitive infrared imaging

摘要

We propose a new guide mode resonant photodiode demonstrating better sensitivity for the infrared imaging. This comprises a backside dielectric sub-wavelength periodic structure and an absorbing region as thin as 90 nm. In this study, electro-optical characterizations of individual InGaAs detector featuring focal-plane array-compatible geometries are fully explained by electro-magnetic simulations. In particular, we observe near perfect collection of the photo-carriers and external quantum efficiency of up to 71% around 1,55 μm.