Selective Area growth of GaSb nano-templates on GaAs (001) using atomic hydrogen assisted Molecular Beam Epitaxy

摘要

We investigate the growth conditions for Selective Area Molecular Beam Epitaxy of GaSb on (001) GaAs inside SiO2 nano-stripes. We show that the use of an atomic hydrogen flux during the growth promote selective epitaxy at low temperature where a few micron long GaSb nanowires can be obtained both in [110] and [11̅0] orientation. Furthermore, we demonstrate that reducing the Sb/Ga flux ratio during growth leads to an improved GaSb relaxation along [110] and line continuity along [11̅0].