Characterization and Comparison of Latest Generation 900-V and 1.2-kV SiC MOSFETs

摘要

This paper performs static and dynamic performance characterization of latest generation 900-V and 1.2-kV discrete Silicon Carbide (SiC) MOSFETs from four well-known manufacturers: CREE, ROHM, General Electric (GE) and Sumitomo Electric Industries (SEI). The static characterization performed includes acquisition of output characteristic, transfer characteristic, specific on-state resistance, threshold voltage and junction capacitances of the devices under test (DUTs). The static characterizations are done from 25°C up to 150°C to investigate variation of parameters versus temperature. At the other hand for dynamic characterization, following a double-pulse tester deigns the tests are done at four different temperatures on all devices: 25°C, 100°C, 150°C and 200°C. In dynamic test, recommended gate voltages are applied to all devices and the switching speeds are matched. The switching losses are computed from double-pulse test (DPT) results.