Advances in SiC-Based Power Conversion for Shipboard Electrical Power Systems

摘要

This paper presents the evolution, state of the art,rnand prospective future of Silicon-Carbide (SiC) based power electronicsrnconversion for shipboard electrical power systems. The latter,rnhaving fully profited from the integrated power system (IPS)rnall-electric ship concept, now face the challenge of an ever increasingrnelectrical payload, with enhanced service and advanced sensorsrnand weapon systems that are forecasted to surpass the onboardrnpropulsion power in next generation ships. Power density has accordinglyrnbecome crucial in this development, and SiC, with its innaternhigh-voltage, high-frequency and high-temperature characteristics,rnthe sought solution. The Office of Naval Research (ONR)rntogether with the Defense Advanced Research Projects Agencyrn(DARPA) have accordingly devoted an immense effort towards therndevelopment of 10 kV SiC MOSFETs and Junction-barrier-rnSchottky (JBS) diodes, having successfully demonstrated the capabilitiesrnof this technology in several applications thus far. Furtheringrnthis effort, ONR is presently directing the development of SiCbasedrnPEBB units for next-generation shipboard systems, embodyingrnthe future of this concept. This technological evolution, as wellrnas the challenges set forth by SiC-based power conversion, representrnthe mainstay of this paper.