Low power and high performance MOSFET

摘要

To analysis leakage current and delay for Double Gate MOSFET with Single gate MOSFET at 45nm in CMOS Technology by using the Cadence Virtuoso simulation tool. When compared to single gate MOSFET, the leakage current and delay are observed to be reduced in double gate MOSFET. The drive current remains the same for both single and double gate MOSFET based on V but the short channel characteristics of double gate MOSFET gets improved. Double gate MOSFET is mostly recommended for low power and high performance application. When compared to bulk Si single gate device, the total power utilization of inverter, static, dynamic circuit and latch by using double gate demonstrates that leakage current and delay reduced by a factor of over 10X.