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Tensile strain effects on magnetic properties in half-doped La0.5Ca0.5MnO3 films

机译:拉伸应变对半掺杂La 0.5 Ca 0.5 MnO 3 薄膜磁性能的影响

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Half-doped LaCaMnO (LCMO) manganites, at the boundary of phase transition from ferromagnetic metal to charge-ordered antiferromagnetic insulator, are very sensitive to external perturbations, such as electric field, magnetic fields, and lattice strain . Recently, novel properties are found in half-doped manganese-oxide thin films and heterostructures . Lattice strain plays a critical role in controlling their electronic and magnetic properties . Therefore, the tensile strain effects on magnetic properties of LCMO films are studied by depositing LCMO films on SrTiO (001) substrates with thickness varying from 165 to 622 A . The distribution of lattice-strain in the films was obtained by measuring the depth dependence of in-plane lattice parameter α using a grazing incidence X-ray diffraction (GIXRD) . It remains tensile-strain state for films with thickness below 50 nm, while most of tensile-strain is relaxed for films with thickness above this value . Magnetic measurements show that the ferromagnetic (FM) transition temperature (TC) of the films keep almost the same value of 250K for films under tensile strain, and it increases to 265K for films under relaxed state . Meanwhile, the magnetization at 10 K increases from 2188 to 4388 emu/cm with lattice strain evolves from tensile to relaxed state . The lattice distortion of the films, investigated by temperature dependence of Raman scattering spectra, indicates that the charge ordering is restrained, and the rotation and breathing modes are enhanced by the in-plane tensile strain . The lattice-strain modulated magnetic properties were explained by considering lattice distortion evolution .
机译:半掺杂LaCaMnO(LCMO)锰铁矿在从铁磁性金属到电荷有序反铁磁性绝缘体的相变边界处,对外部扰动(例如电场,磁场和晶格应变)非常敏感。最近,在半掺杂氧化锰薄膜和异质结构中发现了新的特性。晶格应变在控制其电子和磁性方面起着至关重要的作用。因此,通过在厚度从165到622 A的SrTiO(001)衬底上沉积LCMO膜,研究了拉伸应变对LCMO膜的磁性的影响。通过使用掠入射X射线衍射(GIXRD)测量面内晶格参数α的深度依赖性来获得膜中晶格应变的分布。对于厚度小于50 nm的薄膜,它保持拉伸应变状态,而对于厚度大于该值的薄膜,大部分拉伸应变是松弛的。磁性测量表明,薄膜在拉伸应变下的铁磁(FM)转变温度(TC)保持几乎与250K相同,而在松弛状态下薄膜的铁磁(FM)转变温度(TC)升高至265K。同时,随着晶格应变从拉伸态到松弛态,10 K的磁化强度从2188 emu / cm增加到4388 emu / cm。通过拉曼散射光谱的温度依赖性研究的薄膜的晶格畸变表明,电荷的有序性受到抑制,并且平面内拉伸应变增强了旋转和呼吸模式。通过考虑晶格畸变的演化来解释晶格应变调制的磁性能。

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