Performance enhancement of the junctionless surrounding gate transistor with high Ion/Ioff ratio

摘要

This paper presents a brief description of a uniformly doped junctionless surrounding gate MOSFET. The proposed device is a thin nanowire has equal doping concentration throughout source, channel and drain region. This device provides very low leakage current, high on current and high on-off current ratio. The absence of the ultra shallow junctions in the conventional MOSFETs makes this device easy to fabricate, by eliminating costly annealing and etching techniques. The simulation result stipulates that junctionless transistor is a promising device for the future electronics.