Interfacial stress analysis in TSVs by considering the sidewall scallop

摘要

Through-silicon via (TSV) technology has been the core of the next generation of 3D integration. Although some TSV reliability issues have been addressed in some literatures, but the sidewall scallop resulted from Bosch etch process has not been thoroughly investigated. In this paper, we focus on the effects of different sidewall scallops on the interfacial stress evolution. An axi-symmetric single TSV model which contains three interfaces (Cu/Ta, Ta/SiO2, SiO2/Si) is taken into consideration. Besides, different from other FEM models adopted for TSV analysis, the roughness factors λ and h are employed to character the sidewall scallop. Based on the FEM results, the influence of geometric parameters such as the thickness of Ta layer and the morphology of the sidewall scallop are investigated to develop guidelines for TSV design. At last, the equation of which λ and h should be satisfied is proposed, and provides the guidelines for Bosch etch process.