A novel modeling of TSV MOS capacitance by finite difference method

摘要

This paper proposed a novel modeling of the TSV MOS capacitance by finite difference (FD) method without the assumption of the full depletion approximation (FDA). The potential distribution in the oxide liner and depletion region can be obtained by FD with only one iteration. With the potential distribution, the TSV capacitance-voltage (C-V) characteristics can be easily obtained and good agreements are achieved with other references.