EMI prediction method for SiC inverter by the modeling of structure and the accurate model of power device

摘要

In recent years, the switching speed is increased accelerately. And, the increase of EMI by high dv/dt is a problem. In this paper, the Tri-phase 400 Vrms inverter for system interconnections which used SiC-JFET is analyzed. And, it is shown that noise terminal voltage is analyzable with an error of ±15 dB by highly precise modeling.