Porous silicon nanowire arrays with excellent antireflection property

摘要

Light trapping enhancement by porous silicon nanowire (SiNW) arrays were reported.Porous SiNW arrays were fabricated by an improved metal-assisted chemical etching method.A mechanism of Ag nanoparticles-induced silicon nanowires etching was proposed to explain nanopores formation.The obtained porous SiNW arrays exhibit excellent antireflection property of below 2％ in the wavelength range of 300-1000nm,which can be applicable to solar cells.