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FDTD simulations of electromagnetic coupling to internal resonance modes of metallic and resistive casings of electronic equipment

机译:电子设备的金属和电阻外壳的内部共振模式电磁耦合的FDTD模拟

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This paper examines coupling to electromagnetic modes found within cylindrical (NATO cylinder) and rectangular volumes with metallic and/or resistive surfaces using finite difference time domain (FDTD) simulations. Stripline geometries are positioned within the volume to simulate internal circuitry. External fields from sources in the near and far fields are coupled to internal modes via apertures of various dimensions in the external surfaces. The results have implications for protection of circuitry from high-power, ultra wideband excitation. Several parameters are considered. These include: volume and dimensions of cylindrical and rectangular casings; casing conductivity; aperture placement and size; electromagnetic frequency; and positioning of the simulated circuit and loads placed on that circuit. Calculations to date have demonstrated that intense internal fields can be excited via the casing apertures. Maximum coupling appears near the frequencies of characteristic modes of the casing geometries. Peak coupled field magnitude at the location of the simulated circuit can be 30 dB above the directly radiated value. External excitation from a high power RF source could excite amplified local internal fields that result in nonlinear responses on internal circuitry. Thus, shielding protection offered by the casings may be limited. Frequencies of greatest amplification are shown to be functions of cavity and aperture geometry, and casing conductivity. Impact of intrinsic loss of casings is shown to be minimal, but additional treatment with RF absorbers can be an effective mitigation strategy.
机译:本文使用有限差分时域(FDTD)仿真研究了在具有金属和/或电阻性表面的圆柱体(NATO圆柱体)和矩形体积中发现的电磁模式的耦合。带状线几何位于体积内以模拟内部电路。来自近场和远场的源的外部场通过外表面中各种尺寸的孔耦合到内部模式。结果对保护电路免受大功率,超宽带激励的影响。考虑了几个参数。其中包括:圆柱形和矩形外壳的体积和尺寸;套管导电率孔的位置和大小;电磁频率模拟电路的位置和放置在该电路上的负载。迄今为止的计算表明,可以通过套管孔激发强烈的内部场。最大耦合出现在套管几何特征模式的频率附近。在模拟电路位置处的峰值耦合场强度可以比直接辐射值高30 dB。高功率射频源的外部激励可能会激发放大的局部内部磁场,从而导致内部电路产生非线性响应。因此,可能限制了由壳体提供的屏蔽保护。最大放大频率显示为空腔和孔的几何形状以及套管电导率的函数。套管固有损耗的影响已显示为最小,但是使用RF吸收器进行额外处理可以是有效的缓解策略。

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