A low LO power V-band Gilbert-cell down-conversion mixer using 90 nm CMOS technology

摘要

A Gilbert cell down conversion mixer using TSMC 90 nm CMOS technology is proposed in this manuscript, which is operated with low LO power to drive switching stage for V-band system applications. The broadband Marchand baluns providing a single-to-differential signal transformation to RF and LO ports are arranged around the mixer core for size reduction. The mixer has the highest conversion gain of 0.35 dB at LO power of −8.65 dBm. The total chip area including Marchand baluns is 0.77 × 0.80 mm2.