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Variation-tolerant Computing with Memristive Reservoirs

机译:忆阻储层的容差计算

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As feature-size scaling in integrated CMOS circuits further slows down, attention is shifting to computing by non-von Neumann and non-Boolean computing models. In addition, emerging devices are expected to behave in time-dependent non-linear ways, beyond a simple switching behavior, and will exhibit extreme physical variation, heterogeneity and unstructuredness. One solution path to address this challenge is to use a dynamical information processing approach that harnesses the intrinsic dynamics of networks of emerging devices. In this paper we employ an approach inspired by reservoir computing, a machine learning technique, to perform computations with memristive device networks that show variation and unstructuredness. Reservoir computing harnesses the nonlinear transient dynamics of such networks and is thus ideally suited for our memristive devices. We, for the first time, apply the reservoir computing approach to a regular structured reservoir and show, on a simple signal classification problem, that this architecture is highly tolerant towards device variation. Furthermore we prove that, compared to unstructured random reservoirs, regular structured reservoirs lead to better average performance as well as to higher variation tolerance. Based on our results of the signal classification task, we argue that harnessing the intrinsic non-linear and time-dependent properties of memristive device networks has the potential to lead generally to more efficient, cheaper, and more robust nanoscale electronics.
机译:随着集成CMOS电路中特征尺寸的缩放速度进一步放慢,人们的注意力正转向非冯·诺依曼和非布尔计算模型的计算。此外,新兴的器件有望以时间相关的非线性方式运行,而不仅仅是简单的开关行为,并且将表现出极大的物理变化,异质性和非结构化性。解决这一挑战的一种方法是使用动态信息处理方法,该方法利用新兴设备网络的内在动态。在本文中,我们采用一种受储层计算(一种机器学习技术)启发的方法,通过忆阻器设备网络执行计算,该网络显示出变化和非结构化。储层计算利用了此类网络的非线性瞬态动力学特性,因此非常适合我们的忆阻设备。我们第一次将油藏计算方法应用于常规结构油藏,并在一个简单的信号分类问题上证明了这种架构对设备变化的容忍度很高。此外,我们证明,与非结构化随机油藏相比,规则结构化油藏可带来更好的平均性能以及更高的变化容差。根据信号分类任务的结果,我们认为,利用忆阻器件网络固有的非线性和时间相关特性,有可能普遍导致更高效,更便宜,更坚固的纳米级电子产品。

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