HfO2-based RRAMS for integration on advanced CMOS technology nodes

摘要

Among the emerging nonvolatile memories, the oxide-based Resistive Random Access Memories (OxRAM) are nowadays considered among the most promising solutions for replacing or complementing current non-volatile memories, based on Flash, in next memory generations. [1]. These memories belong to a family of two terminal devices that can be switched to two separate stable resistance values. The interest of OxRAMs is motivated by various advantages that this technology offers as compared to the traditional Flash technology. OxRAM cells offer high potentials in terms of low operating voltages, fast programming time (switching time of 100ns at 1V) low power consumption, promising endurance performance (up to 10⁸ cycles at 1V) and scalability. Furthermore, the OxRAM is a memory technology that can be easily integrated in the back end of line (BEOL) with conventional CMOS. These properties make the OxRRAM suitable for 32nm CMOS technology node and below.