Design of a 200GHz sub-harmonic mixer with planar Schottky diodes

摘要

This paper presents the design and simulation results of a novel 200GHz sub-harmonic mixer. The device is based on an anti-parallel pair of GaAsSchottky diodes. The circuits are integrated with the IF filter and fabricated on a suspended quartz-based substrate. A best double sideband mixer conversion loss of 10.5dB was achieved with 6mW of LO power. Over an RF band of 183–220GHz, the double sideband mixer conversion loss is below 15dB.