Fully integrated single-inductor multiple-output (SIMO) DC-DC converter in CMOS 65 nm technology

摘要

In the nanoscale technologies, the on-chip Power Management design strategy as a part of a System on Chip (SoC) is becoming extremely important. This work presents a fully integrated SIMO converter in a CMOS 65 nm technology. Since passive components are also integrated and their values should result relatively small the converter operates at a switching frequency of 200 MHz. This version counts with a step-up and a step-down outputs, but it can be easily extended to more otuputs. A suitable control strategy for high speed and nano-scale process together with system simulation results are discused.