A 60 GHz up-conversion mixer using asymmetric layout with #x2212;41.1 dBc LO leakage

摘要

This paper presents a 60 GHz up-conversion mixer using asymmetric layout method. The asymmetric layout method contributes to decrease capacitor mismatch, so RF-LO isolation and LO leakage can be improved. The up-conversion mixer is fabricated in a 65 nm CMOS process. This up-conversion mixer achieves RF-LO isolation of −37.3 dBc, LO leakage of −41.1 dBc, conversion gain of 4.3 dB, output power of −8.7dBm and saturated output power of −5.2dBm at a power consumption of 5.4mW.