Four wave mixing efficiency in hydrogenated amorphous silicon waveguides

摘要

Hydrogenated amorphous silicon (a-Si:H) is emerging as a promising new platform for silicon photonics. Low temperature required for its deposition provides an excellent compatibility with complementary metal-oxide-semiconductor (CMOS) processes. Besides, recent works have pointed out that a-Si:H exhibits an enhanced nonlinear efficiency that, combined with low linear losses, makes this material as an ideal candidate for the development of all — optical signal processing silicon devices.