首页> 外文会议>2013 Abstracts IEEE International Conference on Plasma Science >Three-dimensional modeling of silicon nanoparticles synthesis in the downstream region of a DC non-transferred arc plasma torch
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Three-dimensional modeling of silicon nanoparticles synthesis in the downstream region of a DC non-transferred arc plasma torch

机译:直流非转移电弧等离子体炬下游区域中硅纳米颗粒合成的三维建模

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DC non-transferred arc plasmas are commonly used for nanoparticle production at commercial and laboratory scale. Plasma high temperature (around 10000 K) offers the possibility to vaporize a wide range of different precursors and to obtain very high cooling rates for the production of metal, oxide or composite nanoparticles. The typical approach in DC non-transferred arc torches is to inject solid, liquid or gaseous precursor materials in the tail of the plasma discharge, resulting in the formation of a vapour that is transported in a reaction chamber downstream the plasma torch. Nanoparticle nucleation occurs when vapour reaches the supersaturated state in colder regions in the reaction chamber, where additional quenching gas or carrier gas can be injected to control particle formation and to prevent nanoparticle deposition on the walls.
机译:DC非转移电弧等离子体通常用于商业和实验室规模的纳米颗粒生产。等离子体高温(大约10000 K)提供了蒸发各种不同前体的可能性,并获得了非常高的冷却速率,以生产金属,氧化物或复合纳米颗粒。 DC非转移式电弧炬的典型方法是在等离子体放电的尾部注入固态,液态或气态前驱物,从而形成蒸气,该蒸气在等离子体炬下游的反应室中传输。当蒸汽在反应室中较冷的区域达到过饱和状态时,就会发生纳米颗粒成核,可以在其中注入额外的淬灭气体或载气以控制颗粒形成并防止纳米颗粒沉积在壁上。

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