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A New March Test for Process-Variation Induced Delay Faults in SRAMs

机译:SRAM中过程变化引起的延迟故障的新March测试

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Process variations are growing with technology scaling towards nano-scale. This brings new challenges to the design of memory modules, which are often the first circuits to be fabricated using a new technology and usually designed with critical timing. We observed that several delay faults, which are dependent on address transitions, may escape traditional march tests. This paper presents a new march test WT that targets such delay faults. Through Monte Carlo simulations and analytical studies on SRAM designs using an industrial 65nm process, we have demonstrated that WT provides a faulty-chip-coverage that is close to 100%. Most importantly, this is the first march test with test length that targets address-dependent delay faults and hence the first delay test which can be used in practice.
机译:随着技术向纳米规模的扩展,工艺变化也越来越大。这给存储模块的设计提出了新的挑战,存储模块通常是使用新技术制造的第一批电路,并且通常在关键时序下进行设计。我们观察到,取决于地址转换的几种延迟故障可能会避开传统的行军测试。本文提出了一种针对此类延迟故障的新型行军测试WT。通过蒙特卡洛仿真和对采用工业65nm工艺的SRAM设计进行的分析研究,我们证明了WT提供的错误芯片覆盖率接近100%。最重要的是,这是第一个进行长度测试的行进测试,该测试长度针对与地址相关的延迟故障,因此可以在实践中使用。

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