4-Port isolated MOS modeling and extraction for mmW applications

摘要

This paper reports on the extraction of the small-signal equivalent circuit of 28nm isolated RF MOS transistors using on-wafer 4-port S-parameter measurements up to 50GHz. It shows that modeling accuracy of RF MOS is significantly enhanced via a 4-resistance cross-type substrate network plus an isolation sub-network. In addition, the impact of substrate network on Mason gain is presented. Finally, the whole methodology is shown to be very promising to extract and model RF MOS in sub-threshold region for low power/high frequency applications.