Implementation of unipolar inverter based on spatial wave-function switched FET (SWSFET)

摘要

The spatial wave-function switched field effect transistor (SWSFET) has two or three low band-gap quantum well channels that can conduct carrier flow from source to drain of the SWSFET. Because of this property, SWSFETs are useful to implement different multi-valued logic with reduced device count. In this work, we introduce the circuit model of a SWSFET and the design of a unipolar inverter where only one kind of charge carrier contributes to the current flow.